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www.msksemi.com MMBT5551-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complementary to MMBT5401-MS Ideal for Medium Power Amplification and Switching 1. BASE 2. EMITTER MARKING G1 SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW R JA Thermal Resistance From Junction To Ambient 416 /W Operation Junction and TJ,Tstg -55 +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100 A, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 16