Скачать даташит для mmbt5551-ms:

www.msksemi.comMMBT5551-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES Complementary to MMBT5401-MS Ideal for Medium Power Amplification and Switching1. BASE2. EMITTERMARKING: G1SOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW RJA Thermal Resistance From Junction To Ambient 416 /WOperation Junction andTJ,Tstg -55+150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC=100A, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 16