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Pb Free Product NCE75TD120WT 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching Positive temperature coefficient in V CE(sat) Very tight parameter distribution High ruggedness, temperature stable behavior Schematic diagram Application Welding Package Marking and Ordering Information Device Device Package Device Marking NCE75TD120WT TO-247 NCE75TD120WT TO-247 Absolute Maximum Ratings (T =25 C unless otherwise noted) C Symbol Parameter Value Units V Collector-Emitter Voltage 1200 V CES V Gate- Emitter Voltage 30 V GES Collector Current 150