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Pb Free ProductNCE75TD120WT1200V, 75A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switching Positive temperature coefficient in VCE(sat) Very tight parameter distribution High ruggedness, temperature stable behaviorSchematic diagramApplication WeldingPackage Marking and Ordering InformationDevice Device Package Device MarkingNCE75TD120WT TO-247 NCE75TD120WTTO-247Absolute Maximum Ratings (T =25C unless otherwise noted)CSymbol Parameter Value UnitsV Collector-Emitter Voltage 1200 VCESV Gate- Emitter Voltage 30 VGESCollector Current 150

 

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 nce75td120wt.pdf Проектирование, MOSFET, Мощность

 nce75td120wt.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 nce75td120wt.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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