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PMBT2222AMB 40 V, 600 mA NPN switching transistor 21 September 2018 Product data sheet 1. General description NPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package. PNP complement PMBT2907AMB 2. Features and benefits High current (max. 600 mA) Low voltage (max. 40V) Leadless ultra small SMD plastic package Low package height of 0.37 mm Power dissipation comparable to SOT23 3. Applications Switching and linear applications Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter open base - - 40 V voltage IC collector current - - 600 mA ICM peak collector current single pulse; tp 1 ms - - 800 mA hFE DC current gain VCE = 10 V; IC = 150 mA [1] 100 - 300 VCE = 10 V; IC = 500 mA [1] 40