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Ordering number ENA0435A 2SC6099 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 V Collector-to-Emitter Voltage VCES 120 V Collector-to-Emitter Voltage VCEO 100 V Emitter-to-Base Voltage VEBO 6.5 V Collector Current IC 2 A Collector Current (Pulse) ICP 3 A Base Current IB 400 mA Continued on next page. unit mm (typ) unit mm (typ) Package Dimensions Package Dimensions 7518-003 7003-003 2.3 6.5 6.5 2.3 5.0 0.5 2SC6099-E