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MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 2 MMBT5550 140 EMITTER MMBT5551 160 Collector-Base Voltage VCBO Vdc MARKING MMBT5550 160 3 DIAGRAM MMBT5551 180 1 Emitter-Base Voltage VEBO 6.0 Vdc 2 x1x M G Collector Current - Continuous IC 600 mAdc SOT-23 (TO-236) G Electrostatic Discharge ESD V CASE 318 1 Human Body Model > 8000 STYLE 6 Machine Model > 400 x1x = Device Code THERMAL CHARACTERISTICS M1F = MMBT5550LT Characteristic Symbol Max Unit G1 = MMBT5551LT M = Date Code* Total Device Dissipation FR- 5 Board PD G = Pb-Free Package (Note 1) @TA = 25 C 225 mW (Note Microdot may be in either location) Derate Above 25 C 1.8 m