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NDF05N50Z, NDP05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.25 W Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(on) (TYP) @ 2.2 A These Devices are Pb-Free and are RoHS Compliant 500 V 1.25 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP NDD Unit N-Channel D (2) Drain-to-Source Voltage VDSS 500 V Continuous Drain Current RqJC ID 5 5 4.7 A (Note 1) Continuous Drain Current ID 3.2 3.2 3 A RqJC, TA = 100 C (Note 1) G (1) Pulsed Drain Current, VGS @ IDM 20 20 19 A 10 V (Note 1) Power Dissipation RqJC PD 28 96 83 W S (3) Gate-to-Source Voltage VGS 30 V Single Pulse Avalanche Energy, EAS 130 mJ ID = 5.0 A ESD (HBM) (JESD22-A114) Vesd 3000 V RMS Isolation Voltage (t = VISO 4500 V 0.3 sec., R.H. 30%, TA = 4 25 C) (Figure 15) 4 Peak Diode Recovery dv/