Скачать даташит для ndf05n50z_ndp05n50z_ndd05n50z:

NDF05N50Z, NDP05N50Z,NDD05N50ZN-Channel Power MOSFET500 V, 1.25 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 2.2 A These Devices are Pb-Free and are RoHS Compliant500 V1.25 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source Voltage VDSS 500 VContinuous Drain Current RqJC ID 5 5 4.7 A(Note 1)Continuous Drain Current ID 3.2 3.2 3 ARqJC, TA = 100C (Note 1)G (1)Pulsed Drain Current, VGS @ IDM 20 20 19 A10 V (Note 1)Power Dissipation RqJC PD 28 96 83 WS (3)Gate-to-Source Voltage VGS 30 VSingle Pulse Avalanche Energy, EAS 130 mJID = 5.0 AESD (HBM) (JESD22-A114) Vesd 3000 VRMS Isolation Voltage (t = VISO 4500 V0.3 sec., R.H. 30%, TA = 425C) (Figure 15)4Peak Diode Recovery dv/