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NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VOLTS Features VCE(on) = 1.3 V @ Ideal for Coil-on-Plug and Driver-on-Coil Applications IC = 10 A, VGE . 4.5 V Gate-Emitter ESD Protection C Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection RG G Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices RGE Low Saturation Voltage High Pulsed Current Capability E These are Pb-Free Devices Appli