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NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http //onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2.0 V @ high current switching is required. IC = 10 A, VGE . 4.5 V Features C Ideal for Coil-on-Plug Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits G Stress Applied to Load Integrated ESD Diode Protection RGE New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area E Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices D2PAK Low Saturation Voltage CASE