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NGB8204N, NGB8204ANIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featureshttp://onsemi.commonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses18 AMPS, 400 VOLTSinclude Ignition, Direct Fuel Injection, or wherever high voltage andVCE(on) 3 2.0 V @high current switching is required.IC = 10 A, VGE . 4.5 VFeaturesC Ideal for Coil-on-Plug Applications Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp LimitsGStress Applied to Load Integrated ESD Diode ProtectionRGE New Design Increases Unclamped Inductive Switching (UIS) EnergyPer AreaE Low Threshold Voltage to Interface Power Loads to Logic orMicroprocessor DevicesD2PAK Low Saturation VoltageCASE
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ngb8204a.pdf Проектирование, MOSFET, Мощность
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