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NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A, 350 V VCE(on) = 1.3 V @ Features IC = 10 A, VGE . 4.5 V Ideal for Coil-on-Plug and Driver-on-Coil Applications DPAK Package Offers Smaller Footprint for Increased Board Space C Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load RG G Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or RGE Microprocessor Devices Low Saturation Voltage E Hig