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NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A, 350 VVCE(on) = 1.3 V @FeaturesIC = 10 A, VGE . 4.5 V Ideal for Coil-on-Plug and Driver-on-Coil Applications DPAK Package Offers Smaller Footprint for Increased Board SpaceC Gate-Emitter ESD Protection Temperature Compensated Gate-Collector Voltage Clamp LimitsStress Applied to LoadRGG Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic orRGEMicroprocessor Devices Low Saturation VoltageE Hig

 

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 ngd8205a.pdf Проектирование, MOSFET, Мощность

 ngd8205a.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 ngd8205a.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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