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NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device is a rugged co-packaged free wheeling diode with a low forward voltage. 20 A, 1200 V Features VCEsat = 2.10 V Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Eoff = 0.65 mJ Optimized for Low Case Temperature in IH Cooker Application C Low Gate Charge These are Pb-Free Devices Typical Applications Inductive Heating G Consumer Appliances Soft Switching E ABSOLUTE MAXIMUM RATINGS R