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NGTB20N120IHWG IGBT - Induction Cooking This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications. http //onsemi.com Features 20 A, 1200 V Extremely Efficient Trench with Fieldstop Technology VCEsat = 2.20 V Low Switching Loss Reduces System Power Dissipation Eoff = 0.48 mJ Optimized for Low Losses in IH Cooker Application C This is a Pb-Free Device Typical Applications Inductive Heating Consumer Appliances G Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector-emitter voltage @ TJ = 25 C VCES 1200 V Collector current IC A @ TC = 25 C 40 @ TC = 10