Скачать даташит для ngtb20n120ihwg:

NGTB20N120IHWGIGBT - Induction CookingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellsuited for resonant or soft switching applications.http://onsemi.comFeatures20 A, 1200 V Extremely Efficient Trench with Fieldstop TechnologyVCEsat = 2.20 V Low Switching Loss Reduces System Power DissipationEoff = 0.48 mJ Optimized for Low Losses in IH Cooker ApplicationC This is a Pb-Free DeviceTypical Applications Inductive Heating Consumer AppliancesG Soft SwitchingEABSOLUTE MAXIMUM RATINGSRating Symbol Value UnitCollector-emitter voltage @ TJ = 25C VCES 1200 VCollector current IC A@ TC = 25C 40@ TC = 10