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Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA 1 2 3 1 Emitter Collector power dissipation PC 400 mW 2 Collector 3 Base 2.54 0.15 Junction temperature Tj 150 C JEDEC TO 92 Storage temperature Tstg 55 +150 C EIAJ SC 43A Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10 A, IE = 0 30 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 20 V Emitter to base voltage VEBO IE =