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2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage - - 60 V ID drain current - - 300 mA IDM peak drain current single pulse; - - 1.2 A tp 10 s RDSon drain-source on-state VGS =10V; - 1.1 1.6 resistance ID = 500 mA 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel