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2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 11 September 2009 Product data sheet1. Product profile1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits1.4 Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage - - 60 VID drain current - - 300 mAIDM peak drain current single pulse; - - 1.2 Atp 10 sRDSon drain-source on-state VGS =10V; - 1.1 1.6 resistance ID = 500 mA2N7002CKNXP Semiconductors60 V, 0.3 A N-channel