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Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100 600 V - 40 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C 1. Gate G 2. Collector 3. Emitter E 1 2 3 Absolute Maximum Ratings (Tc = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 80 A Tc = 100 C IC 40 A Collector peak current ic(peak) Note1 160 A Collector dissipation PC 45 W Junction to case thermal impedance j-c 2.78 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes 1. Pulse width limited by sa