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2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1424 2SA1585S VCE(sat) = -0.2V (Typ.) 4 0.2 2 0.2 4.5+0.2 (IC/IB = -2A / -0.1A) -0.1 1.5 0.1 1.6 0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15 (1) (2) (3) -0.05 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 Structure 0.45+0.15 2.5+0.4 0.5 -0.05 3.0 0.2 -0.1 5 Epitaxial planar type PNP silicon transistor (1) Base (1) (2) (3) ROHM MPT3 (2) Collector (1) Emitter EIAJ SC-62 (3) Emitter ROHM SPT (2) Collector EIAJ SC-72 (3) Base Abbreviated symbol AE Denotes hFE Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20