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R6535KNZ Datasheet Nch 650V 35A Power MOSFET lOutline l TO-3PF VDSS 650V RDS(on)(Max.) 0.115 ID 35A PD 102W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tube Packing code C17 Marking R6535KNZ Quantity (pcs) 300 lAbsolute maximum ratings (Ta = 25 C ,unless otherwise specified) l Parameter Symbol Value Unit VDSS Drain - Source voltage 650 V Continuous drain current (Tc = 25 C) ID*1 35 A IDP*2 Pulsed drain current 105 A static 20 V VGSS Gate - Source voltage AC(f 1Hz) 30 V IAS Avalanche current, single pulse 6.6 A EAS*3 Avalanche energy, single pulse 867 mJ Power dissipation (Tc = 25 C) PD 102 W Tj Junctio