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Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 o Continuous Drain Current (TC=25 C) 11 ID A o C Continuous Drain Current (TC=100 ) 7 IDM Drain Current-Pulsed 1 44 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 553 O IAR Avalanche Current 1 11 A O EAR Repetitive Avalanche Energy 1 mJ 16.2 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 4.0 O Total Power Dissipation (TC=25 oC ) 162 W PD Linear Derating Factor W/ oC 1.3 Operating Junction and