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Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25 ) 4.7 ID A Continuous Drain Current (TC=100 ) 3 1 IDM Drain Current-Pulsed 19 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 59 mJ O 1 IAR Avalanche Current 4.7 A O 1 EAR Repetitive Avalanche Energy 2 mJ O dv/dt Peak Diode Recovery dv/dt 3 6.5 V/ns O * Total Power Dissipation (TA=25 ) 2.5 W PD Total Power Dissipation (TC=25 ) 20 W Line