Скачать даташит для irfr110a:

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25 ) 4.7IDAContinuous Drain Current (TC=100 )31IDM Drain Current-Pulsed 19 AOVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 259 mJO1IAR Avalanche Current 4.7 AO1EAR Repetitive Avalanche Energy 2 mJOdv/dt Peak Diode Recovery dv/dt 3 6.5 V/nsO*Total Power Dissipation (TA=25 ) 2.5 WPD Total Power Dissipation (TC=25 )20 WLine