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Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 o ) C 50 ID A Continuous Drain Current (TC=100 oC) 35.4 IDM Drain Current-Pulsed A 1 200 O _ 20 VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 857 O IAR Avalanche Current 50 A 1 O EAR Repetitive Avalanche Energy 1 12.6 mJ O dv/dt Peak Diode Recovery dv/dt 3 5.5 V/ns O Total Power Dissipation (TC=25 o ) C 126 W PD Linear Derating Factor W/