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Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input CapacitanceID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.020 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Continuous Drain Current (TC=25 o )C 50IDAContinuous Drain Current (TC=100 oC)35.4IDM Drain Current-Pulsed A1 200O_ 20VGS Gate-to-Source Voltage VEAS Single Pulsed Avalanche Energy 2 mJ857OIAR Avalanche Current 50 A1OEAR Repetitive Avalanche Energy 112.6 mJOdv/dt Peak Diode Recovery dv/dt 35.5 V/nsOTotal Power Dissipation (TC=25 o )C 126 WPDLinear Derating Factor W/