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Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 o C Continuous Drain Current (TC=25 ) 4.5 ID A o C Continuous Drain Current (TC=100 ) 3.1 IDM Drain Current-Pulsed 1 20 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 54 mJ O IAR Avalanche Current 1 4.5 A O EAR Repetitive Avalanche Energy 1 mJ 2.3 O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O Total Power Dissipation (TC=25 o ) C 23 W PD o Linear Derating Facto