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Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100oCContinuous Drain Current (TC=25 )4.5IDAoCContinuous Drain Current (TC=100 )3.1IDM Drain Current-Pulsed 120 AOVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 254 mJOIAR Avalanche Current 1 4.5 AOEAR Repetitive Avalanche Energy 1 mJ2.3O3dv/dt Peak Diode Recovery dv/dt 6.5 V/ns OTotal Power Dissipation (TC=25 o )C 23 WPDoLinear Derating Facto