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Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.22 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 7.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.176 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 o C Continuous Drain Current (TC=25 ) 7.2 ID A o Continuous Drain Current (TC=100 C ) 5 IDM Drain Current-Pulsed 1 32 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 103 mJ O IAR Avalanche Current 1 7.2 A O EAR Repetitive Avalanche Energy 1 mJ 3.0 O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O Total Power Dissipation (TC=25 oC) 30 W PD o Linear Derating Facto