Скачать даташит для irls520a:

Advanced Power MOSFETFEATURESBVDSS = 100 V Logic Level Gate DriveRDS(on) = 0.22 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 7.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.176 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100oCContinuous Drain Current (TC=25 )7.2IDAoContinuous Drain Current (TC=100 C )5IDM Drain Current-Pulsed 132 AOVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2103 mJOIAR Avalanche Current 1 7.2 AOEAR Repetitive Avalanche Energy 1 mJ3.0O3dv/dt Peak Diode Recovery dv/dt 6.5 V/ns OTotal Power Dissipation (TC=25 oC)30 WPDoLinear Derating Facto