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Ordering number EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions High fT. unit mm Small reverse transfer capacitance. 2018A Adoption of FBET process. [2SA1580/2SC4104] C Collector B Base E Emitter ( ) 2SA1580 SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ( )70 V Collector-to-Emitter Voltage VCEO ( )60 V Emitter-to-Base Voltage VEBO ( )4 V Collector Current IC ( )50 mA Collector Current (Pulse) ICP ( )100 mA Collector Dissipation PC 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=( )40V, I