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Ordering number EN5992 P-Channel Silicon MOSFET FTS1004 DC-DC Converter Applications Features Package Dimensions Low ON Resistance. unit mm 4V drive. 2147 Mounting height 1.1mm. [FTS1004] 3.0 0.975 0.65 8 5 1 Drain 2 Source 3 Source 4 Gate 5 Drain 1 4 6 Source 0.125 0.25 7 Source 8 Drain SANYO TSSOP8 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 3 A Drain Current (pulse) IDP PW 10 s, duty cycle 1% 15 A Allowable Power Dissipation PD Mounted on a ceramic board (1000mm2 0.8mm) 1.3 W Channel Temperature Tch 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Volta

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 fts1004.pdf Проектирование, MOSFET, Мощность

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