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Ordering number ENN7004 FTS1012 P-Channel Silicon MOSFET FTS1012 Load Switching Applications Features Package Dimensions Low ON-resistance. unit mm 4.0V drive. 2147A Mounting height 1.1mm. [FTS1012] 3.0 0.425 0.65 8 5 1 Drain 2 Source 3 Source 1 4 0.125 4 Gate 0.25 5 Drain 6 Source 7 Source 8 Drain Specifications SANYO TSSOP8 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --6 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% --32 A Allowable Power Dissipation PD Mounted on a ceramic board (1000mm2 0.8mm) 1.3 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Sourc

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