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2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) APPLICATIONS 3 2 1 FEATURES SILICON PLANAR EPITAXIAL PNP 1.91 0.10 (0.075 0.004) A TRANSISTOR 0.31 rad. (0.012) 3.05 0.13 HERMETIC CERAMIC SURFACE MOUNT (0.12 0.005) 1.40 (0.055) PACKAGE (SOT23 COMPATIBLE) 1.02 0.10 max. A = (0.04 0.004) SCREENING OPTIONS AVAILABLE SPACE QUALITY LEVEL OPTIONS HIGH SPEED SATURATED SWITCHING LCC1 (SOT23) APPLICATIONS PAD 1 Base PAD 2 Emitter PAD 3 Collector For high reliability general purpose applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS TCASE = 25 C unless otherwise stated VCBO Collector - Base Voltage -20V VCEO Collector - Emitter Voltage (IB