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2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 0.10(0.02 0.004) 0.31rad.(0.012)APPLICATIONS 32 1FEATURES SILICON PLANAR EPITAXIAL PNP 1.91 0.10 (0.075 0.004)ATRANSISTOR 0.31rad.(0.012)3.05 0.13 HERMETIC CERAMIC SURFACE MOUNT (0.12 0.005)1.40(0.055)PACKAGE (SOT23 COMPATIBLE) 1.02 0.10max.A =(0.04 0.004) SCREENING OPTIONS AVAILABLE SPACE QUALITY LEVEL OPTIONS HIGH SPEED SATURATED SWITCHING LCC1 (SOT23) APPLICATIONS PAD 1 Base PAD 2 Emitter PAD 3 Collector For high reliability general purpose applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS TCASE = 25C unless otherwise stated VCBO Collector - Base Voltage -20V VCEO Collector - Emitter Voltage (IB
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2n3209xcsm.pdf Проектирование, MOSFET, Мощность
2n3209xcsm.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
2n3209xcsm.pdf База данных, Инновации, ИМС, Транзисторы



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