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MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C O Characteristics at Tamb=25 C Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 6 V, IC = 2 mA Current Gain Group O hFE 70 140 - Y hFE 120 240 - G hFE 200 400 - L hFE 350 700 - at VCE = 6 V, IC = 150 mA hFE 25 - - Collector