Скачать даташит для c945:

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 C945 TRANSISTOR (NPN ) 1.EMITTER FEATURE Excellent hFE linearity 2.COLLECTOR Low noise 3. BASE Complementary to A733 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 V A , IB=0 Collector-emitter breakdown voltage V(BR)CEO IC=100 50 V Emitter-base breakdown voltage V(BR)EBO IE=100 A