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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 40 V IC= 100 A, IE=0 Collector-emitter breakdown voltage V(BR)CEO 25 V IC= 0.1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 V I