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2N3773 High power NPN transistor Features High power dissipation Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in 1 TO-3 metal case. It is intended for linear 2 amplifiers and inductive switching applications. TO-3 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2N3773 2N3773 TO-3 Tray October 2008 Rev 2 1/7 www.st.com 7 Electrical ratings 2N3773 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCEO Collector-emitter voltage (IB = 0) 140 V VCEV Collector-emitter voltage (VBE = -1.5 V) 160 V VCBO Collector-base voltage (IE = 0) 160 V VEBO Emitter-base voltage (IC = 0) 7 V IC Collector current 16 A ICM Collector peak current (tP