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2N3773High power NPN transistorFeatures High power dissipation Low collector-emitter saturation voltageDescriptionThe device is a planar NPN transistor mounted in 1TO-3 metal case. It is intended for linear 2amplifiers and inductive switching applications.TO-3Figure 1. Internal schematic diagramTable 1. Device summaryOrder code Marking Package Packaging2N3773 2N3773 TO-3 TrayOctober 2008 Rev 2 1/7www.st.com 7Electrical ratings 2N37731 Electrical ratingsTable 2. Absolute maximum ratingsSymbol Parameter Value UnitVCEOCollector-emitter voltage (IB = 0) 140 VVCEV Collector-emitter voltage (VBE = -1.5 V) 160 VVCBOCollector-base voltage (IE = 0) 160 VVEBOEmitter-base voltage (IC = 0) 7 VIC Collector current16 AICM Collector peak current (tP