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STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 N-channel 30 V, 0.0037 , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE Power MOSFET Features Type VDSS RDS(on) max ID 3 1 3 STB95N3LLH6 30 V 0.0042 80 A 2 DPAK 1 STD95N3LLH6 30 V 0.0042 80 A STP95N3LLH6 30 V 0.0042 80 A IPAK STU95N3LLH6 30 V 0.0047 80 A RDS(on) * Qg industry benchmark 3 Extremely low on-resistance RDS(on) 1 3 2 1 High avalanche ruggedness D PAK TO-220 Low gate drive power losses Application Figure 1. Internal schematic diagram Switching applications D (TAB or 2) Description This product utilizes the 6th generation of design rules of ST s proprietary STripFET technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all G(1) packages. S(3) AM01474v1 Table 1. Device summary Order co

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 stb95n3llh6 std95n3llh6 stp95n3llh6 stu95n3llh6.pdf Проектирование, MOSFET, Мощность

 stb95n3llh6 std95n3llh6 stp95n3llh6 stu95n3llh6.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 stb95n3llh6 std95n3llh6 stp95n3llh6 stu95n3llh6.pdf База данных, Инновации, ИМС, Транзисторы