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STB95N3LLH6, STD95N3LLH6STP95N3LLH6, STU95N3LLH6N-channel 30 V, 0.0037 , 80 A, D2PAK, DPAK, IPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max ID313STB95N3LLH6 30 V 0.0042 80 A 2DPAK1STD95N3LLH6 30 V 0.0042 80 ASTP95N3LLH6 30 V 0.0042 80 A IPAKSTU95N3LLH6 30 V 0.0047 80 A RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on)1321 High avalanche ruggednessDPAKTO-220 Low gate drive power lossesApplicationFigure 1. Internal schematic diagram Switching applicationsD (TAB or 2)DescriptionThis product utilizes the 6th generation of design rules of STs proprietary STripFET technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all G(1)packages.S(3)AM01474v1Table 1. Device summaryOrder co