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STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB 3 Order codes VDS RDS(on) max ID PTOT 1 STD2N105K5 DPAK STP2N105K5 1050 V 8 1.5 A 60 W TAB STU2N105K5 TAB Industry s lowest RDS(on) x area Industry s best figure of merit (FoM) 3 3 2 2 1 1 Ultra low gate charge IPAK TO-220 100% avalanche tested Zener-protected Figure 1. Internal schematic diagram Applications D(2, TAB) Switching applications Description G(1) These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high ef

 

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 std2n105k5 stp2n105k5 stu2n105k5.pdf Проектирование, MOSFET, Мощность

 std2n105k5 stp2n105k5 stu2n105k5.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 std2n105k5 stp2n105k5 stu2n105k5.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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