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2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -180 V Collector-emitter voltage VCEO -180 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Base current IB -1 A Ta = 25 C 2.0 Collector power PC W dissipation Tc = 25 C 20 JEDEC Junction temperature Tj 150 C JEITA SC-67 Storage temperature range Tstg -55 to 150 C TOSHIBA 2-10R1A Note Using continuously under heavy loads (e.g. the application of high Weight 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signifi