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2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current VCEO = -50V, IC = -100mA (max) Unit mm 0.6 0.05 Excellent hFE linearity 0.5 0.03 hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 Complementary to 2SC6026CT Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V 0.35 0.02 0.05 0.03 Collector-emitter voltage VCEO -50 V 0.15 0.03 Emitter-base voltage VEBO -5 V Collector current IC -100 mA Base current IB -30 mA Collector power dissipation PC 100* mW 1.BASE Junction temperature Tj 150 C 2.EMITTER Storage temperature range Tstg -55 to 150 C CST3 3.COLLECTOR * Mounted on FR4 board (10 mm 10 mm 1 mmt) Note Using con