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2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications High voltage and high current : VCEO = -50V, IC = -100mA (max) Unit: mm0.60.05 Excellent hFE linearity 0.50.03 : hFE (IC = -0.1 mA) / hFE (IC = -2 mA)= 0.95 (typ.) High hFE : hFE = 120 to 400 Complementary to 2SC6026CT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -50 V0.350.02 0.050.03Collector-emitter voltage VCEO -50 V0.150.03Emitter-base voltage VEBO -5 VCollector current IC -100 mABase current IB -30 mACollector power dissipation PC 100* mW1.BASE Junction temperature Tj 150 C2.EMITTER Storage temperature range Tstg -55 to 150 C CST3 3.COLLECTOR * : Mounted on FR4 board (10 mm 10 mm 1 mmt) Note: Using con