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2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.5 A JEDEC TO-92MOD Collector power dissipation PC 900 mW JEITA Junction temperature Tj 150 C TOSHIBA 2-5J1A Storage temperature range Tstg -55 to 150 C Weight 0.36 g (typ.) Note1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltag