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2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications Unit mm High Voltage Switching Applications High voltage VCBO = 200 V (max) VCEO = 200 V (max) Small flat package Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 20 mA Collector power dissipation PC 150 mW JEDEC TO-236MOD Junction temperature Tj 125 C JEITA SC-59 Storage temperature range Tstg -55 to 125 C TOSHIBA 2-3F1A Note Using continuously under heavy loads (e.g. the application of high Weight 0.012 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decr